? semiconductor components industries, llc, 2000 november, 2000 rev. 1 1 publication order number: ntgs3443t1/d ntgs3443t1 power mosfet 2 amps, 20 volts pchannel tsop6 features ? ultra low r ds(on) ? higher efficiency extending battery life ? miniature tsop6 surface mount package applications ? power management in portable and batterypowered products, i.e.: cellular and cordless telephones, and pcmcia cards maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 20 volts gatetosource voltage continuous v gs 12 volts thermal resistance junctiontoambient (note 1.) total power dissipation @ t a = 25 c drain current continuous @ t a = 25 c pulsed drain current (t p 10 m s) r q ja p d i d i dm 244 0.5 2.2 10 c/w watts amps amps thermal resistance junctiontoambient (note 2.) total power dissipation @ t a = 25 c drain current continuous @ t a = 25 c pulsed drain current (t p 10 m s) r q ja p d i d i dm 128 1.0 3.1 14 c/w watts amps amps thermal resistance junctiontoambient (note 3.) total power dissipation @ t a = 25 c drain current continuous @ t a = 25 c pulsed drain current (t p 10 m s) r q ja p d i d i dm 62.5 2.0 4.4 20 c/w watts amps amps operating and storage temperature range t j , t stg 55 to 150 c maximum lead temperature for soldering purposes for 10 seconds t l 260 c 1. minimum fr4 or g10pcb, operating to steady state. 2. mounted onto a 2 square fr4 board (1 sq. 2 oz. cu. 0.06 thick single sided), operating to steady state. 3. mounted onto a 2 square fr4 board (1 sq. 2 oz. cu. 0.06 thick single sided), t 5.0 seconds. 2 amperes 20 volts r ds(on) = 65 m 3 4 1256 device package shipping ordering information ntgs3443t1 tsop6 3000 tape & reel pchannel tsop6 case 318g style 1 http://onsemi.com w marking diagram 443 w = work week pin assignment 3 2 1 4 gate drain source 6 5 4 1 2 3 5 6 drain drain drain
ntgs3443t1 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted)* characteristic symbol min typ max unit off characteristics drainsource breakdown voltage (v gs = 0 vdc, i d = 10 m a) v (br)dss 20 vdc zero gate voltage drain current (v gs = 0 vdc, v ds = 20 vdc, t j = 25 c) (v gs = 0 vdc, v ds = 20 vdc, t j = 70 c) i dss 1.0 5.0 m adc gatebody leakage current (v gs = 12 vdc, v ds = 0 vdc) i gss 100 nadc gatebody leakage current (v gs = +12 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics gate threshold voltage (v ds = v gs , i d = 250 m adc) v gs(th) 0.60 0.95 1.50 vdc static drainsource onstate resistance (v gs = 4.5 vdc, i d = 4.4 adc) (v gs = 2.7 vdc, i d = 3.7 adc) (v gs = 2.5 vdc, i d = 3.5 adc) r ds(on) 0.058 0.082 0.092 0.065 0.090 0.100 forward transconductance (v ds = 10 vdc, i d = 4.4 adc) g fs 8.8 mhos dynamic characteristics input capacitance (v 50vd v 0vd c iss 565 pf output capacitance (v ds = 5.0 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 320 pf reverse transfer capacitance f = 1 . 0 mhz) c rss 120 pf switching characteristics turnon delay time t d(on) 10 25 ns rise time (v dd = 20 vdc, i d = 1.0 adc, t r 18 45 ns turnoff delay time (v dd 20 vdc , i d 1 . 0 adc , v gs = 4.5 vdc, r g = 6.0 ) t d(off) 30 50 ns fall time t f 31 50 ns total gate charge (v 10 vd v 4 5 vd q tot 7.5 15 nc gatesource charge (v ds = 10 vdc, v gs = 4.5 vdc, i d = 4.4 adc ) q gs 1.4 nc gatedrain charge i d = 4 . 4 adc) q gd 2.9 nc bodydrain diode ratings diode forward onvoltage (i s = 1.7 adc, v gs = 0 vdc) v sd 0.83 1.2 vdc reverse recovery time (i s = 1.7 adc, di s /dt = 100 a/ m s) t rr 30 ns *indicates pulse test: p.w. = 300 m sec max, duty cycle = 2%. *handling precautions to protect against electrostatic discharge is mandatory.
ntgs3443t1 http://onsemi.com 3 typical electrical characteristics figure 1. onregion characteristics figure 2. transfer characteristics figure 3. onresistance vs. gatetosource voltage figure 4. onresistance vs. drain current and gate voltage figure 5. onresistance variation with temperature figure 6. draintosource leakage current vs. voltage 0 4 1.6 6 2 1.2 0.8 v ds, draintosource voltage (volts) i d, drain current (amps) 2 0 0.4 8 v gs = 5 v v gs = 3 v v gs = 2.5 v v gs = 4.5 v v gs = 3.5 v v gs = 2 v v gs = 1.5 v t j = 25 c 4 0 6 2 8 v gs, gatetosource voltage (volts) i d, drain current (amps) 0.6 2.2 2.6 1.8 1.4 3 1 t j = 25 c t j = 125 c t j = 55 c v ds = 10 v 1.5 0.4 0.35 0.3 0.25 3.5 3 2.5 0.2 0.15 0.1 0.05 0 2 4 4.5 5 v gs, gatetosource voltage (volts) r ds(on), draintosource resistance (ohms) i d = 4.4 a t j = 25 c 0.1 i d, drain current (amps) r ds(on), draintosource resistance (ohms) 045 3 26 17 0.06 0.12 0.04 0.08 0.14 0.16 8 t j = 25 c v gs = 2.5 v v gs = 4.5 v v gs = 2.7 v 1.5 1.4 1.2 1.3 1.1 1 0.9 t j , junction temperature ( c) r ds(on), draint osource resist ance (normalized) 50 50 25 0 25 75 125 100 i d = 4.4 a v gs = 4.5 v 0.8 0.7 150 0.01 0.1 1 10 100 v ds, draintosource voltage (volts) i dss, leakage (na) 01620 12 8 4 t j = 25 c t j = 125 c t j = 100 c v gs = 0 v v gs = 4 v
ntgs3443t1 http://onsemi.com 4 typical electrical characteristics figure 7. capacitance variation figure 8. gatetosource and draintosource voltage vs. total charge 0 1200 1000 8 800 600 10 6 412 v ds, draintosource voltage (volts) c, capacitance (pf) 400 200 0 21420 18 16 t j = 25 c v gs = 0 v c iss c oss c rss 5 4 3 2 1 0 q g, total gate charge (nc) 045 3 26 1 78 t j = 25 c i d = 4.4 a v gs qt q1 q2 v gs, gatetosource voltage (volts) 50 50 0.8 0 100 1.2 1 0.6 150 figure 9. gate threshold voltage variation with temperature t j, junction temperature ( c) v gs(th), gate threshold voltage (normalized) i d = 250 m a 0.9 1.3 1.1 0.7 25 25 75 125 figure 10. diode forward voltage vs. current 4 3 2 1 0 v sd , sourcetodrain voltage (volts) 0.3 0.7 0.8 0.6 0.5 0.9 0.4 1 t j = 150 c t j = 25 c v gs = 0 v i s, source current (amps)
ntgs3443t1 http://onsemi.com 5 typical electrical characteristics 0.01 1.00 0.10 10.00 20 16 12 8 4 0 100.00 figure 11. single pulse power time (sec) power (w) 1e04 1e+00 0.01 1e+01 1e01 1e02 square wave pulse duration (sec) 0.1 1 1e03 figure 12. normalized thermal transient impedance, junctiontoambient duty cycle = 0.5 1e+02 1e+03 normalized effective transient thermal impedance 0.2 single pulse 0.1 0.05 0.02 0.01
ntgs3443t1 http://onsemi.com 6 information for using the tsop6 surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. mm inches 1.9 0.039 1.0 0.094 0.7 0.074 2.4 0.028 0.95 0.037 0.95 0.037 soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
ntgs3443t1 http://onsemi.com 7 package dimensions style 1: pin 1. drain 2. drain 3. gate 4. source 5. drain 6. drain 23 4 5 6 a l 1 s g d b h c 0.05 (0.002) dim min max min max inches millimeters a 0.1142 0.1220 2.90 3.10 b 0.0512 0.0669 1.30 1.70 c 0.0354 0.0433 0.90 1.10 d 0.0098 0.0197 0.25 0.50 g 0.0335 0.0413 0.85 1.05 h 0.0005 0.0040 0.013 0.100 j 0.0040 0.0102 0.10 0.26 k 0.0079 0.0236 0.20 0.60 l 0.0493 0.0610 1.25 1.55 m 0 10 0 10 s 0.0985 0.1181 2.50 3.00 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. m j k tsop6 case 318g02 issue g
ntgs3443t1 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. ntgs3443t1/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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